PN junction is formed in a process which may beAThe grow typeBDiffused typeCAny of the mentioned

A PN junction can be formed through either the grow type process or the diffused type process. Therefore, the answer is C: Any of the mentioned.

In the grow type process, the PN junction is formed during the crystal growth. A silicon crystal is grown from a seed crystal using one type of dopant and then the dopant type is changed during the growth process.

In the diffused type process, the PN junction is formed after the crystal growth. The crystal is grown using one type of dopant and then a different type of dopant is diffused into the crystal surface at high temperatures.