The reverse saturation current in junction diode is independent of A- Temperature B- junction area C- potential barrier D- doping of 'P' and 'N' type region

The reverse saturation current in a junction diode is dependent on all the options mentioned above.

A- Temperature: The reverse saturation current doubles for every 10°C rise in temperature. So, it is not independent of temperature.

B- Junction Area: The reverse saturation current is directly proportional to the junction area. Larger the junction area, larger will be the reverse saturation current. So, it is not independent of junction area.

C- Potential Barrier: The reverse saturation current is also dependent on the potential barrier. Higher the barrier potential, lower is the reverse saturation current. So, it is not independent of potential barrier.

D- Doping of 'P' and 'N' type region: The reverse saturation current is also dependent on the doping levels of the 'P' and 'N' type regions. Higher the doping level, lower is the reverse saturation current. So, it is not independent of the doping of 'P' and 'N' type region.