‘The emitter terminal of BJT is usually heavily doped and reversed biased’-Do youagree with this statement? Illustrate your response logically.

No, the statement is not entirely correct. In a Bipolar Junction Transistor (BJT), the emitter terminal is indeed heavily doped, but it is not reverse biased, it is forward biased.

Here's why:

1. The emitter is heavily doped because it needs to supply a large number of majority carriers for the current flow. The heavy doping ensures a high concentration of majority charge carriers (electrons for NPN and holes for PNP).

2. However, the emitter-base junction is not reverse biased, it's forward biased. In forward bias, the p-type side (which has a high concentration of holes) is connected to the positive terminal of the battery and the n-type side (which has a high concentration of electrons) is connected to the negative terminal. This allows current to flow easily as the external voltage helps in reducing the barrier potential.

3. On the other hand, the base-collector junction is reverse biased. This means the p-type side is connected to the negative terminal and the n-type side is connected to the positive terminal. This increases the barrier potential and only a small leakage current can flow.

So, while the emitter terminal of a BJT is heavily doped to increase the concentration of majority charge carriers, it is forward biased, not reverse biased.