Which of the following are Called as Wide Band-gap power devices(a)  Silicon Controlled Rectifier(b) IGBT(c) Silicon Carbide MOSFET(d) Galium Nitride MOSFET

The wide band-gap power devices among the options provided are:

(c) Silicon Carbide MOSFET (d) Gallium Nitride MOSFET

Here's why:

Wide band-gap semiconductors are materials that permit device operation at much higher voltages, frequencies, and temperatures than conventional semiconductors like silicon and gallium arsenide. They have a larger band gap energy than conventional semiconductors.

(a) Silicon Controlled Rectifier (SCR) and (b) Insulated Gate Bipolar Transistor (IGBT) are not considered wide band-gap devices because they are typically made from silicon, which is a narrow band-gap material.

On the other hand, (c) Silicon Carbide (SiC) MOSFETs and (d) Gallium Nitride (GaN) MOSFETs are considered wide band-gap devices. SiC and GaN have larger band gaps than silicon, allowing them to operate at higher voltages and temperatures. This makes them ideal for power applications where efficiency and reliability are crucial.