fter epitaxial growth the next step for IC fabrication is..?Question 5Answera.emitter diffusionb.Base diffusionc.isolation diffusion

The next step for IC fabrication after epitaxial growth is isolation diffusion.

Here's a step-by-step breakdown:

1. Epitaxial Growth: This is the process of growing a single crystal silicon layer on a single crystal silicon substrate. It's important because it provides a high-quality surface on which the devices can be fabricated.

2. Isolation Diffusion: After the epitaxial layer is grown, the next step is isolation diffusion. This process is used to electrically isolate the devices from each other. This is typically done by diffusing a heavy concentration of impurities into the areas that are not to be active.

3. Base Diffusion: This is the process of creating the base region of a bipolar junction transistor (BJT). It's done by diffusing a light concentration of impurities into the active areas.

4. Emitter Diffusion: This is the final step in the process of creating a BJT. It involves diffusing a heavy concentration of impurities into the base region to form the emitter.

So, the correct answer to your question is c. Isolation Diffusion.